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APTM50AM24SG
Phase leg Series & parallel diodes MOSFET Power Module
VBUS
VDSS = 500V RDSon = 24m typ @ Tj = 25C ID = 150A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features
Q1 G1 OUT S1
*
Q2 G2 0/VBUS
S2
* * *
Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
G1 S1
VBUS
0/VBUS
OUT
Benefits * * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant
S2 G2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM50AM24SG - Rev 2
Max ratings 500 150 110 600 30 28 1250 24 30 1300
Unit V A V m W A mJ
July, 2006
APTM50AM24SG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V T j = 25C
Tj = 125C
Typ
VGS = 10V, ID = 75A VGS = VDS, ID = 6mA VGS = 30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 150A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 150A R G = 0.8 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 150A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 150A, R G = 0.8 Test Conditions Tj = 25C Tj = 125C Tc = 85C
24 3
Max 500 3 28 5 500 Max
Unit A mA m V nA Unit nF
Dynamic Characteristics
Min
Typ 19.6 4.2 0.3 434 120 216 10 17 50 41 1.9 1.5 3.3 1.7
nC
ns
mJ mJ
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM IF VF
Min 200
Typ
Max 350 600
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=200V IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
120 1.1 1.4 0.9 31 60 120 500
1.15 V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
July, 2006 2-6 APTM50AM24SG - Rev 2
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APTM50AM24SG
Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM IF VF trr Qrr Test Conditions VR=600V IF = 120A IF = 240A IF = 120A IF = 120A VR = 400V di/dt = 400A/s Tj = 25C Tj = 125C Tc = 70C Min 600 Typ Max 350 600 120 1.6 1.9 1.4 130 170 440 1840 Min Transistor Diodes 2500 -40 -40 -40 3 2 Typ 1.8 V ns nC Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Max 0.10 0.46 150 125 100 5 3.5 280
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTM50AM24SG - Rev 2
July, 2006
APTM50AM24SG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
Low Voltage Output Characteristics 600 I D, Drain Current (A) I D, Drain Current (A) 480 360 240 120 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A)
Normalized to VGS=10V @ 75A VGS=10V V GS=10&15V 8V 7.5V 7V 6.5V 6V 5.5V
Transfert Characteristics
480 420 360 300 240 180 120 60 0
25
T J=25C TJ=125C VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle
T J=-55C
0
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 160
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0
120 80
V GS=20V
40
0 60 120 180 240 300 360 25
July, 2006 4-6 APTM50AM24SG - Rev 2
ID, Drain Current (A)
50 75 100 125 TC, Case Temperature (C)
150
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APTM50AM24SG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000 ID, Drain Current (A)
limited by R DSon
ON resistance vs Temperature
VGS=10V ID=75A
1.1
1.0
0.9
0.8 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2
VGS (TH), Threshold Voltage (Normalized)
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage
100s
100
limited by RDSon
1ms
10
Single pulse TJ =150C TC=25C
10ms
1 1 10 100 1000 VDS, Drain to Source Voltage (V)
100000 Ciss C, Capacitance (pF) 10000 Coss VGS , Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 V DS=100V I D=150A 12 T =25C J V =250V
DS
10 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600
VDS=400V
1000 Crss 100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
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APTM50AM24SG - Rev 2
July, 2006
APTM50AM24SG
Delay Times vs Current 60 50 t d(on) and td(off) (ns)
V DS =333V RG =0.8 T J=125C L=100H
Rise and Fall times vs Current 80
VDS=333V RG=0.8 TJ=125C L=100H
30 20 10 0 30
t r and tf (ns)
40
td(off)
60
tf
40
td(on)
20
tr
0 80 130 180 230 ID, Drain Current (A) 280 30 80 130 180 230 280 I D, Drain Current (A) Switching Energy vs Gate Resistance 8 Switching Energy (mJ) 6 4 2 0 Eoff
VDS=333V ID=150A TJ=125C L=100H
Switching Energy vs Current 7 Switching Energy (mJ) 6 5 4 3 2 1 0 30 80 130 180 230 280 ID, Drain Current (A) Operating Frequency vs Drain Current
ZVS VDS=333V D=50% RG=0.8 T J=125C T C=75C VDS=333V RG=0.8 T J=125C L=100H
Eon
Eoff
Eon
Eoff
0
1
2
3
4
5
6
7
8
9
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 10000
500 Frequency (kHz) 400 300 200 100 0 30 60
Hard switching
IDR, Reverse Drain Current (A)
600
1000
T J=150C
100
T J=25C
ZCS
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
90
120
150
ID, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM50AM24SG - Rev 2

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